麦草茎秆皮层硅元素分布和化学状态的研究

Research on Silicon in the Cuticle of Wheat Stem

中文关键词:  麦秆皮层  硅元素  SEM-EDX  红外光谱法

Key Words:cuticle of wheat stem  silicon  SEM-EDX  IR

中文摘要:

      分别采用扫描电镜-X射线能谱仪（SEM-EDX）和红外光谱分析法（IR）对麦草茎秆皮层表面形态和皮层中硅元素的分布及其结合方式进行了研究。结果表明，麦秆皮层外表面有两种形态，且硅元素在两种不同外表面中存在的化学状态不同。多数外表面呈高低相间的平行条纹，气孔器分布较少或没有；这种外表面的皮层中硅的密度分布也呈高低相间的平行条纹，硅的结合方式主要是Si—O—C和Si—H。另一种外表面具有颗粒状物且气孔器分布较多；颗粒状物是硅高度密集的部位，气孔器周围（即气孔器壁）的硅密度也甚高，硅的结合方式除了Si—O—C，还有Si—O—Si和Si—C，气孔器周围主要以Si—H的方式结合。

Abstract:

      The distribution and chemical state of silicon in the cuticle of wheat stem were researched by scanning electron microscopy- energy dispersive X-ray analysis (SEM-EDX) and infrared absorption spectroscopy (IR). The results showed that there were two sorts of outer surfaces of wheat stem, the major kind was with parallel stripes, consisting mainly of the silicon element. The chemical states of silicon were Si—O—C and Si—H. The other kind had many granules and stomas on it. The density of silicon element in granules and in the circle of the stoma (i.e. the stomatic wall) was very high. The silicon had other chemical states of Si—O—Si and Si—C, besides Si—O—C and Si—H.